Enhanced electrochemical etching of ion irradiated silicon by localized amorphization
نویسندگان
چکیده
منابع مشابه
Dynamic Simulation of Electrochemical Etching of Silicon
In the presented work the dynamic simulation of a silicon anodization process is performed. Two mechanisms of etch form development (diffusion in electrolyte, current flow) are considered and simulated. Influence of electrolyte conductivity and radius of the opening in the masking layer is discussed.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2014
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4876917